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廖国普68-69-A34_精品.doc

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2.20 （a）Determine the total number of energy states in silicon between Ev and Ev-kT at T=300K.(b) Repeat part (a) for GaAs. 2.21 (a)Plot the density of states in the counduction band of silicon over the range Ec≤E≤Ec+0.2eV.(b) Repeat part (a) for the density of states in the valence band over the range Ev-0.2eV≤E≤Ev. 2.22 Find the ratio of the effective density of states in the counduction band at Ec+kT to the effective density of states in the valence band at Ev-kT. Section 2.5 Statistical Mechanics 2.23 Plot the Fermi-Dirac probability function,given by Equation(2.29),over the range -0.2≦（E-EF）Kt.Assume T=300K.(b)Repeat part (a)for T=400K. 2.28 Show that the probability of an energy state being occupied △E above the Fermi.energy is the same as the probability of a state being occupied △E below the Fermi level. 2.29（a）Determine for what energy above EF(in terms of kT) the Fermi-Dirac probability function is within 2 percent of the Boltzmann approximation. (b)Give the value of the probability function at this energy. 2.30 The Fermi energy level for a particular material at T=300K is 6.25eV. The electrons in this material follow the Fermi-Dirac distribution function. (a)Find the probability of an energy level at 6.50eV being occupied by an electron. (b)Repeat part (a) if the temperature is increased to T=950K.(Assume that EF is a constant.) (c) Calculate the temperature at which there is a 1 percent probability that a state 0.30eV below the Fermi level will be empty of an electron. 2.31 The Fermi energy for copper at T=300K is 7.0eV. The electrons in copper follow the Fermi-Dirac distribution function. (a) Find the probability of an energy level at 7.15eV being occupied by an electron. (b) Repeat part (a) for T=1000K. (Assume that EF is a constant.) (c) Repeat part (a) for E=6.85eV and T=300K. (d) Determine the probability of the energy state at E=EF being occupied at T=300K and at T=1000K. 2.32 Consider the energy levels shown in Figure P2.32. Let T=300K. (a)