快充 同步整流 MOS管 NCE0160G Datasheet Rundex.pdfVIP

Pb Free Product NCE0160G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● V = 100V,I =60A DS D Schematic diagram RDS(ON) 16mΩ @ VGS=12.6V ● Spe