PbxSr1-xTiO3陶瓷及薄膜制备和性能研究.docVIP

文章控制在3个最多不超过4个页码（单倍行距，页边距各2cm） PbxSr1-xTiO3陶瓷及薄膜的制备和性能研究 裴亚芳， 杨传仁， 陈宏伟， 张继华， 冷文健 （电子科技大学 电子薄膜与集成器件国家重点实验室, 四川 成都 610054） 摘 要： 研究了Pb含量 对PbxSr1-xTiO3(x=0.20.8)陶瓷微结构和介电性能的影响，当x＜0.45时晶体为立方相，x0.45时为四方相；随着Pb含量增大，陶瓷气孔率下降，致密度增加，晶粒尺寸逐渐增大，居里峰近似线性地向高温方向移动,并具有一致的居里外斯常数。采用射频磁控溅射法在Pt/Ti/SiO2/Si(100)上制备了Pb0.3Sr0.7TiO3(PST30)薄膜，经550 ℃退火后为(111)择优取向的多晶薄膜，1Hz下的可调率为21.8％。 关键词： PbxSr1-xTiO3陶瓷；射频磁控溅射；Pb0.3Sr0.7TiO3PST30)薄膜；微结构；介电性能 中图分类号：TN384 文献标识码：A xSr1-xTiO3 Ceramics and Thin Films Pei Ya-fang, Yang Chuan-ren, Chen Hong-wei, Zhang Ji-hua, Leng wen-jian (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) Abstract: PbxSr1-xTiO3 (x=0.2~0.8) ceramics were prepared by conventional powder-processing method. The effect of the Pb content on the microstructure and dielectric properties were studied. X-Ray diffraction studies show that the lattice structure changes from cubic to tetragonal phase at 45 % Pb content. Scanning Electron Microcopy studies indicate that the higher Pb content is, the greater grain size and the higher density is.(r-T curve exhibits that Curie-Temperature linearly increases with the increase of Pb content and the compositions ( x=0.20~0.55 ) show the similar Curie-Wiess constant. Pb0.3Sr0.7TiO3thin film are prepared by RF magnetron sputtering on Pt/Ti/SiO2/Si(100) substrate and annealed at 550 ℃. Meanwhile, the films exhibit (111) orientation and the tunability is measured to be 21.8% at 1 kHz. Key words:PbxSr1-xTiO3ceramics; RF magnetron sputtering ;Pb0.3Sr0.7TiO3 thin film; microstructure; dielectric properties 微波可调介电材料在微波可调元件上有着广阔的应用前景，如移相器、谐振器、滤波器等[1-2]是BaxSr1-xTiO3 (BST)最近Cross[3]等发现PbxSr1-xTiO3(PST)陶瓷可调性高达70％,介电损耗低于0.1％,优值FOM)高达700，并且薄膜具有比BST更低的晶化温度，是一种非常实用的电场调节元件材料目前对Sol-Gel)法制备PST薄膜的研究较多％％ [5]，而对PST系列陶瓷以及磁控溅射法制备PST薄膜的研究少。本文一方面就PbxSr1-xTiO3(x=0.20.8)陶瓷中Pb含量对其晶体结构、微观形貌和介电性能的影响进行研究，另一方面就磁控溅射制备PST薄膜及性能作初步研究。 1.1 PbxSr1-xTiO3(x=0.2~0.8)陶瓷的制备 采用传统的