化学浴沉积法制备金属氧化物薄膜外文文献翻译英文原文.docVIP

MaterialsChemistryandPhysics65(2000)1±31 Review Chemicaldepositionmethodformetalchalcogenidethin?lms R.S. Mane,C.D. Lokhande* ThinFilmPhysicsLaboratory,DepartmentofPhysics,ShivajiUniversity,Kolhapur416004,India Received22July1999;receivedinrevisedform28December1999;accepted3January2000 Abstract Metal chalcogenide thin ?lms preparation by chemical methods are currently attracting considerable attention as it is relatively inexpensive,simpleandconvenientforlargeareadeposition.Avarietyofsubstratessuchasinsulators,semiconductorsormetalscanbe usedsincethesearelowtemperatureprocesseswhichavoidoxidationandcorrosionofsubstrate.Theseareslowprocesseswhichfacilitates betterorientationofcrystalliteswithimprovedgrainstructure.Dependingupondepositionconditions,?lmgrowthcantakeplacebyion- by-ioncondensationofthematerialsonthesubstratesorbyadsorptionofcolloidalparticlesfromthesolutiononthesubstrate.Usingthese methods,thin?lmsofgroupII±VI,V±VI,III±VIetc.havebeendeposited.Solarselectivecoatings,solarcontrol,photoconductors,solid stateandphotoelectrochemicalsolarcells,opticalimaging,hologramrecording,opticalmassmemoriesetc.aresomeoftheapplicationsof metalchalcogenide?lms. Inthepresentreviewarticle,wehavedescribedindetail,chemicalbathdepositionmethodofmetalchalcogenidethin?lms,itiscapable of yielding good quality thin?lms. Their preparative parameters, structural, optical, electrical properties etc. aredescribed. Theoretical backgroundnecessaryforthechemicaldepositionofthin?lmsisalsodiscussed.#2000ElsevierScienceS.A.Allrightsreserved. Keywords: Metalchalcognidethin?lms;Thinsolid?lms;Chemicalbathdeposition 1. Introduction interfacetechniquesarewellknown[1±7].Chemicalbath deposition(CBD)whichisalsoknownassolutiongrowth, controlled precipitation, or simply chemical deposition, recently has emerged as a method for the deposition of metalchalcogenidethin?lms.Itisananalogue,intheliquid phase,ofthewellknownchemicalvapourdepositioninthe gaseous phase. The reaction takes place between the dis-