功率MOSFET管并联应用时电流分配问题的研究.docVIP

功率MOSFET管并联应用时的电流分配不均问题研究 曲振江 Qiu Zhenjiang (河北沧州师范专科学校物理与电子信息系 沧州061001) (Physics and Electronic Department of CangZhou Teacher’s College,CangZhou 061001) 摘要： 并联应用的功率MOSFET由于各方面的原因会产生电流分配不匀的现象，为减小由于电流分配不匀造成的不良形象，目前人们只能根据经验通过实验来确定有关的电路参数。为改变这种现状，本人针对常用的电路拓扑，用数学方法详细地分析了功率MOSFET管的特性参数和电路参数对静态和动态漏极电流分配不匀状况的影响，推导出了反映漏极电流分配不匀程度和对漏极电流上升速度影响程度的精确计算公式，并通过相关文献的实验验证了理论分析的正确性，为在实际工作中采取措施减小电流分配不匀的影响提供了理论依据。 关键词：功率MOSFET管 并联应用 电流分配 栅阈电压 中图分类号：TM485 Research of the Badly-Distributed Electric Current Problem of the Power MOSFET Tube in Parallel Connection Abstract: The leading electric resistance of the power MOSFET has the positive temperature characteristic, which makes it easier to be used in parallel connection. But the parameter inconformity of the parts and that of the grid and leak source pole result in the badly-distributed electric current problem of the power MOSFET tube. As for this problem, the previous analysis not only lack depth but also are not concrete enough to be used as a guiding line. In order to reduce the ill influence on electric current allotment, people have to pass experiments or according to some experience, to get certain relevant electric circuit parameters. In order to change the situation, the paper has analyzed the power MOSFET tube in detail, especially the influence of its characteristic parameters and electric circuit parameters on both the static and dynamic states. As a result, the paper has produced the accurate calculation formula, verified its accuracy through experiments and provided theory basis for the measures to reduce the ill effect. Key words: ?power MOSFET ,??????????? paralel aplication,???????? current allotment,?????grid threshold voltage 功率MOSFET管的导通电阻由于具有正的温度特性，对电流具有自动调节能力，因而较易于并联应用。但由于以下几方面的原因，仍会使并联应用的功率MOSFET管产生的电流分配不均问题： 1、器件自身参数不一致，如：导通电阻Ron、栅阈电压UT、跨导gm、及极间电容Cgs、Cgd等; 2、栅极电路参数不一致，如：栅极电路串联电阻Rg和栅极电路分布电感Lg等； 3、漏源极电路参数不一致，如：漏源极电路分布电感L0、LS等。 关于并联应用的功率MOSFET管的电流分配不均问题，已有文献进行过分析[1][2]，但仍嫌不够深入和具体，不足以对实际工作进行指导。故本文将再进一步分析一下功率MOSFET管