Combining a multi deposition multi annealing technique with a scavenging （Ti） to improve the high-kmetal gate stack performance for a gate-last process.pdfVIP

Vo1．35．No．10 JournalofSemiconductors 0ctober2014 Combiningamultidepositionmultiannealingtechniquewithascavenging(Ti)to improvethehigh—k／metalgatestackperformanceforagate-lastprocess ZhangShuxiang(张淑祥)，YangHong(~Z)，TangBo(唐波)，TangZhaoyun(唐兆云)， Xu ：feng(徐烨峰)，XuJingOeS)，andYanJiang(f~L)t InstituteofMicroelectronics，ChineseAcademyofSciences，Beijing100029，China Abstract：ALDHtO，filmsfabricatedbyanove1multidepositionmultiannealing(MDMA)techniqueareinves—