T_c-Enhanced Codoping Method for GaAs-based Dilute Magnetic Semiconductors.pdfVIP

T -Enhanced Codoping Method for GaAs-based Dilute Magnetic Semiconductors c 1,2 ∗ 3 1,2 Van An DINH , Kazunori Sato , and Hiroshi Katayama-Yoshida 1Department of Condensed Matter Physics, and 2Department of Computational Nanomaterials Design, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka , Ibaraki, Osaka 567-0047, Japan. 3 3 Institut f¨ur Festk¨orperforchung, Forschungszentrum J¨ulich, D-52425 J¨ulich, Germany 0 Based on ab initio calculations of Ga Mn N As and Ga Mn C As , we propose a new 0 1−x x y 1−y 1−x x y 1−y 2 codoping method to enhance the Curie temperature Tc of diluted magnetic semiconductors. The solubility of Mn can be increased up to high concentration by the codoping of N or C to reduce v the lattice and volume expansion caused by Mn doping. It is found that the impurity band of the o majority spin is strongly broadened and pushed up into the higher energy region due to the strong N p-d hybridization caused by the codoping, and the Tc becomes higher than the room temperature at x 6%. 6 Keywords: ab initio calculation, III-V compound semiconductors, transition metal, codoping, dilute magnetic ] semiconductors, semiconductors spintronics, materials design i c s l- The disco