一种消除功率放大器低频振荡的方法.pdfVIP

32 11 Vol. 32 No. 11 2010 11 M oder Radar Nov. 2010 + 收/发技术 : TN722. 7 5 : A : 1004- 7859( 2010) 11- 0080- 04 1 1 2 2 2 2 2 冷永清, 曾 云 , 张立军 , 安 斌, 陈晓娟 , 张一恒, 郑占旗 ( 1. 湖南大学物理与微电子科学学院, 长沙 410082; 2. 中国科学院微电子研究所, 北京 100029) : , S GaN HEMT, , GaN H EMT LCR , , , , , : S ; ; A M ethod for E lim inating L owfrequency O scillaton in Power Am p lfiers 1 1 2 2 2 2 2 LENG Yo gqi g, ZENG Yu , ZHANG L iju , AN Bi , CHEN X iaojua , ZHANG Y ihe g, ZHENG Zha qi ( 1. College of Physics a d M icroclectro ics, Hu a U iversity, Cha gsha 410082, Chi a) ( 2. I stitute ofM icroelectro ics, Ch i ese Academy of Scie ce, Beiji g 100029, Chi a) A bstrac t: Pow er am plifier is o e of themost mi porta t com po e ts of the tra sm itters. Lowfreque cy oscillatio usually appears i Sba d Bala ced pow er amp lifier ( BPA ) ofGaN HEMT. A effectivem ethod for elmi i ati g lowfreque cy oscillatio is proposed, that is, a comp lex lossy LCR absorb i g etwork isp laced betwee gate electrode ofGaN HEMT a d grou d. S i ce the resista ce of the absorbi g ewt ork is effectively paralleled i to the circuit i low freque cies, wh ile shorted i the w ork freque cies, the h igh gai of lower freque cies is reduced outside of w ork i g ba d a d lowfreque cy oscillatio is elmi i ated. Besides, the gai a d VSWR perform a ce cha ge u obviously i work i g freque cy ba d. K ey w ord s: Sba d; bala ced power amp lifier; lowfreque cy oscillatio 0 引 言