SILABS 应用笔记FSK芯片PA扩展电路研究.pdfVIP

AN656 USING NEC BJT(NESG270034 AND NESG250134) POWER A MPLIFIER WITH Si446 X 1. Introduction Silicon Laboratories Si446x devices are high-performance, low-current transceivers covering the sub-GHz frequency bands from 142 to 1050 MHz. The Si4464/63 offers exceptional output power of up to +20 dBm with outstanding TX efficiency. The Si4464/63 can achieve up to +27 dBm output power with built-in ramping control of a low-cost, external power device (BJT, LDMOS, or even a PA block). The high output power increases link budget allowing extended ranges and highly robust communication links. In this application note, the NESG270034 and NESG250134 NPN SiGe type power BJTs from NEC are used as an external power device. The NESG270034 is the NPN SiGe RF transistor for medium output power (2 W) amplification with a 6 V power supply. The NESG250134 is the NPN SiGe RF transistor for medium output power (800 mW) amplification with a 3.3 V power supply. The purpose of this application note is to provide a description of the PA matching and filter circuit when using NEC BJTs with the Si446x family of RFICs at 169, 434, 470, and 868 MHz bands. Measurements were performed on the Si4463-B0 chip but are applicable to other 20 dBm output members of the Si446x family of chips. 2. BJT Power Amplifier (PA) and Match Circuit Figure 1 shows the diagram of the RF circuits when using an external PA with the Si446x. The PA is inserted between the Si446x match circuit and harmonics filter. GPIO0 and GPIO2 are used to control the RF switch between the transmitter and receiver. Filters are used to attenuate the harmonics to meet applicable regulatory standards.