《MS3022_Rev A》.pdfVIP

MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C CASE OUTLINE general purpose microwave applications. The device is capable of withstanding an .250 2LFL M210 infinite load VSWR under rated conditions. The MS3022 is particularly suited for (Common Base) microwave communication links in the 1.0 to 2.0 GHz frequency ranges. Features • GOLD METALLIZATIOM • POUT = 1.0 W MINIMUM • G = 7.0 dB P • COMMON BASE PIN CONNECTION ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (P ) 7 W (At rated pulse condition) d Voltage and Current Collector to Base Voltage (BVCES) 45 V Emitter to Base Voltage (BVEBO) 3.5 V Collector Current (IC) 0.2 A Temperatures Storage Temperature -65 to +150 °C 1. Collector 2. Base Operating Junction Temperature +200 °C 3. Emitter 4. Base ELECTRICAL CHARACTERISTICS @ 25°°C °° SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS BV Collector to Emitter Breakdown I = 5 mA, R = 50 45 V CEO C BE BV Collector to Base Breakdown I