脉冲激光沉积(PLD)技术和应用预案.pptVIP

Pulsed Laser Deposition (PLD);Thin Film Deposition Pulsed Laser Deposition a) Compared to other growth techniques b) Experimental Setup c) Advantages and Disadvantages Basic Theory of PLD Opportunities;Thin Film Deposition;Thin Film Deposition;Ways to deposit thin films;Low energy deposition (MBE): ~0.1 eV may get islanding unless you pick right substrate or heat substrate to high temperatures ;Low energy deposition (MBE): ~0.1 eV may get islanding unless you pick right substrate or heat substrate to high temperatures ;Pulsed Laser Deposition;Target: metals, semiconductors… Laser: UV, 10 ns pulses Vacuum: Atmospheres to ultrahigh vacuum Film thickness: typically 100-200 nm. Deposition rate: 0.1 nm/pulse;Pulsed Laser Deposition;Slot 6;Advantages of PLD;Disadvantages of PLD;Processes in PLD;Expansion of plume causes sudden drop in pressure just above surface Shock wave pulls droplets of liquid off of surface;Exfoliation;Process parameters;Characteristic properties of Y2SiO5:Ce thin films grown with PLDE. Coetsee, J.J.Terblans,H.C.Swart, Physica B 404(2009)4431–4435;Different nanostructure:;The good crystalline quality;Opportunities;Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production;MBE;Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production; Direct writing of electronic components- in air! Rapid process refinement No masks, preforms, or long cycle times True 3-D structure fabrication possible Single laser does surface pretreatment, spatially selective material deposition, surface annealing ,component trimming, ablative micromachining, dicing and via-drilling ;Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production;Over twice the natural enrichment of B10/B11, Ga69/Ga71 in BN and GaN films Plasma centrifuge by toroidal and axial magnetic fields of 0.6MG!;Ultrahigh quality films Circuit writing Isotope Enrichment