黄汉忠—130—131—B13.docVIP

The equation of a positively charged hole inthe presence of an electric field is (4.3) where is the magnitude of the electronic charge , is the acceleration , is the electric field ,and is the effective mass of thr hole. If the electric field is constant, then we expect the velocity to increase linearly with time. However, charged particles in a semiconductor are involved in collisions with ionized impurity atoms and with waves of thermally vibrating lattice atoms. These collisions, or scattering events, alter the velocity characteristics of the particle. as the hole accelerates in a crystal due to the electric field,the velocity increases. When the charged particle loses most, or all. Of its energy. the particle will again begin to accelerate and gain energy until it is again involved inascattering process. this continues over and over again. throughout this process,the particle will gain an average drift velocity which ,for low electric fields ,is directly proportional to the electric field .we can then write (4.4) Hole mobility Where is the proportionality factor and is called the hole mobility. The mobility is an important parameter of the semiconductor since it describes how well a particle will move due to an electric field. The unit of mobility is usually expressed in terms of cm2/V-s. Hole drift current density By combining Equations (4.2) and (4.3), we can write the drift current density due to holes as (4.5) The drift current due to holes is in the same direction as the applied electric field. The same discussion of drift applies to electrons . (4.6) where is the drift current density due to electrons and is the average drift velocity of electrons. The net charge density of electrons is negative (-e). The average drift velocity of an electron is also proportional to the electric field for small fields. However, s