Classification of Thin Films.pptVIP

Classification of Thin Films (a) single crystals(b) epitaxial(c) polycrystalline(d) amorphous. Properties of Thin Films (a) high surface to volume ratio(b) geometrical control (dictated by substrate)(c) compact(d) single crystal like properties Uses of Thin Films (a) microelectronic devices(b) telecommunication devices(c) wear resistant coatings(d) decorative coatings(e) optical coatings (windows, solar cells, etc.)(f) sensors(g) catalysts liquid phase deposition process, LPD) SEM images of the deposited h-FeOOH films at various concentrations. Concentration of H3BO3: (A) 0.30, (B) 0.40, (C) 0.45, (D) 0.50, (E) 0.55, and (F) 0.60 mol dm-3. LPD-grown silica has been widely tested for application in integrated circuit processing, and in metal-oxide-semiconductor (MOS) and in complementary metal-oxide-semiconductor (CMOS) LPD silica is being explored for use in waveguides and in MOS solar cells Chemical bath deposition (CBD) Some Principles involved while the water itself provides oxygen, initially in the form of OH- ions. Hydrolysis can occur even in acidic solutions when the metal cation is easily hydrolyzable, as with Fe3+ , Ti4+ , Zr4+ , and Al3+ CBD requires supersaturated solutions, i.e. the concentrations must exceed the solubility product In a closed system, growth cannot continue once the reactants have been depleted below this point, which determines the thickness of the film Chemical Vapor Deposition Involves one or more gas phase species which react on a solid surface (substrate) to deposit a solid flim. Typically, the reaction is initiated by heating the substrate. Other mechanisms of supplying the activation energy necessary to initiate reactions include: laser CVD, photo CVD, and plasma enhanced CVD. Typical Parameters Pressure 0.1 torr – 1 atmSubstrate Temp. 100° C - 1500° CDeposition Rate 60?/min – 300,000?/min The use of organometallic precursors as gas phase speci