光电子器件基础与技术_lecture703.pptVIP

Noises - Amplified Spontaneous Emission (ASE) noise - ASE ASE beat noise - ASE Signal beat noise - ASE shot noise - Signal shot noise * Noise Figure (噪声指数) - NF is a positive number, nearly always 2 (I.e. 3 dB) - Good performance: when NF ~ 3 dB - NF is one of a number of factors that determine the overall BER of a network. * Raman Scattering * * * On-Off gain - Comparison between changes of output with and without pump Net gain - The ratio between output and input signal powers On-Off gain (dB) = Net gain (dB) + fiber attenuation (dB) Gain wavelength * Any wavelength Gain bandwidth * ~ 5THz * Can be designed * ASE noise Crosstalk noise - Pump fluctuation * use stable pump source * high order pump - Signal crosstalk (gain difference at different signal frequencies) * backward pump Rayleigh scattering noise - Rayleigh back scattering * Reduce fiber length Bidirectional pump - Double Rayleigh scattering * Reduce fiber length Bidirectional pump * Pump - High power - Proper wavelength - Long life time - Polarization issue - Two types * LD array * Cascade Raman fiber laser * * Electrons in ground state Pump signal @ 980 nm Energy Absorption Excited state Pump signal @ 980 nm Transition Metastable state Excited state Ground state Pump signal @ 980 nm 4.3 半导体放大器 * * ASE Photons1550 nm Ground state Excited state Metastable state Transition Transition Pump signal @ 980 nm Excited state Metastable state Transition Pump signal @ 980 nm Stimulated emission 1550 nm Signal photon 1550 nm Ground state 4.3 半导体放大器 * * - F-P cavity amplifier - Traveling wave amplifier 4.3 半导体放大器 * * 1、有一个光电二极管是有GaAs材料构成的，在300k时其带隙能量为1.43ev，求这种材料的截止波长。 2、已知在波长范围1300＜λ＜1600范围，InGaAs材料的量子效率大约为90％，求在这个波长范围内这种材料的响应度（用波长λ表示），并求在波长1400nm，1550nm处的响应度。 3、半导体激光器发射光子的能量近似等于材料的禁带宽度，已知GsAs材料的Eg＝1.43eV某一InGsAsP材料的Eg=0.96eV，求它们的发射波长 4、光电二极管中所有载流子产生的倍增因子M定义为IM/IP ，IP为式（6.9）中的平均光生电流，IM为雪崩增益后输出电流的平均值。现已知一种硅雪崩二极