Radiation Damage in Silicon Detectors epp辐射损伤的硅探测器 EPP.fnal.gov.pptVIP

Michael MollCERN- PH-DT2 - Geneva - Switzerland Outline Motivation to develop radiation harder detectors: Super-LHC  Introduction to the RD50 collaboration Radiation Damage in Silicon Detectors (A review in 5 slides) Macroscopic damage (changes in detector properties) Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary The CERN RD50 Collaboration http://www.cern.ch/rd50 Collaboration formed in November 2001 Experiment approved as RD50 by CERN in June 2002 Main objective: Radiation Damage – I. Effective doping concentration Radiation Damage – II. Leakage Current Approaches to develop radiation harder tracking detectors Defect Engineering of Silicon Understanding radiation damage Macroscopic effects and Microscopic defects Simulation of defect properties kinetics Irradiation with different particles energies Oxygen rich Silicon DOFZ, Cz, MCZ, EPI Oxygen dimer hydrogen enriched Si Pre-irradiated Si Influence of processing technology New Materials Silicon Carbide (SiC), Gallium Nitride (GaN) Diamond: CERN RD42 Collaboration Amorphous silicon Device Engineering (New Detector Designs) p-type silicon detectors (n-in-p) thin detectors 3D and Semi 3D detectors Stripixels Cost effective detectors Simulation of highly irradiated detectors Monolithic devices Outline Motivation to develop radiation harder detectors: Super-LHC  Introduction to the RD50 collaboration Radiation Damage in Silicon Detectors (A review in 4 slides) Macroscopic damage (changes in detector properties) Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary SiC: CCE after irradiation CCE before irradiation 100 % with a particles and MIPS tested on various samples 20-40mm  CCE after irradiation with a particles neutron irradiated samples material produced by CREE 25 mm thick layer Czochralski silicon (Cz) Epitaxial silicon (EPI) Oxygen concentration in FZ, CZ and EPI Epitaxial silicon - Annealing 50