powerelectronìcsCH2—powerdevìces2.pptVIP

The concept of power electronic devices The electronic devices that can be directly used in the power processing circuits to convert or control electric power Features of power electronic devices Uncontrolled device — power diode   Power Diodes Thyristors Thyrisotor family Full controlled power devices small leakage current BJT transients analysis 截止：漏源极间加正电源，栅源极间电压为零。 P基区与N漂移区之间形成的PN结J1反偏，漏源极之间无电流流过。 导电：在栅源极间加正电压UGS 当UGS大于UT时，P型半导体反型成N型而成为反型层，该反型层形成N沟道而使PN结J1消失，漏极和源极导电 。 Turn on Turn on delay td(on) Current rising time tr Voltage falling time tfv Turn on time ton——td(on) + tri + tfv Turn off Turn off delay time td(off) Voltage rising time trv Current falling time tf Turn off time toff——td(off)+ trv+ tf i Main parameters of MOSFET Switching frequency deep related with Cin. Switching could be accelerated by reducing Rs. Switching time between 10~100ns，frequency can be higher than 100kHz. rDS(on) increases rapidly with the device blocking voltage rating Drive power increases with the switching frequency Positive coefficient, easily paralleled Integration with both advantages—Bi-MOS devices Insulated-gate Bipolar Transistor——IGBT or IGT） GTR + MOSFET 1986 mass production and application begin Voltage and current rating are increasing to replace GTO 1) IGBT Structure and working principle G、C、E ? 驱动原理与电力MOSFET基本相同，场控器件，通断由栅射极电压uGE决定。 导通：uGE大于开启电压UGE(th)时，MOSFET内形成沟道，为晶体管提供基极电流，IGBT导通。 通态压降：电导调制效应使电阻RN减小，使通态压降减小。 关断：栅射极间施加反压或不加信号时，MOSFET内的沟道消失，晶体管的基极电流被切断，IGBT关断。 IGBT turn on???? Turn on delay td(on) Current rising time tri Uce falling time tfv1 Uce falling time tfv2 Turn on time ton=td(on) +tri+tfv1+tfv2 uCE falling time including: tfv1+ tfv2 tfv1——IGBT中MOSFET单独工作的电压下降过程； tfv2——MOSFET和PNP晶体管同时工作的电压下降过程。 Turn off delay time td(off） Voltage rising time trv Current falling time tfi1 Current falling time tfi2 Turn off time toff = td(off）+ trv + tfi1 + tfi2 电流下降时间又可分为tfi1和tfi2两段。 tf