Journal of The Electrochemical Society, 156 1 E8-E12 2009E8Characterization of Electrochemically Grown Crystalline
CuInSe2 Thin Films
T. P. Gujar,a,z V. R. Shinde,a Jong-Won Park,a,b Hyun Kyung Lee,b
Kwang-Deog Jung,a and Oh-Shim Jooa,z
aClean Energy Research Center, Korea Institute of Science and Technology, Seoul 130-650,
Republic of Korea
bThe Industrial Chemistry, University of Sang-Myung, Seoul 130-650, Republic of Korea
To obtain thin films of crystalline copper indium diselenide CuInSe2 onto the conducting substrates, the electrochemical
experiments were conducted in an aqueous acidic solution of mixture of the corresponding salts. The influence of potential and
substrate onto the orientation and surface morphology of CuInSe2 encountered by an electrodeposition technique is reported. The
thin films have been characterized by X-ray diffraction XRD, field-emission scanning electron microscopy, and UV-visible
spectroscopy. The Cu:In:Se ratio of electrodeposited CuInSe2 thin films was determined to be near 1:1:2 by electron dispersive
spectroscopy. The XRD results revealed that the electrosynthesized thin film, deposited at cathodic potential of 700 mV vs
Ag/AgCl have a preferential orientation along the 112 directions for tetragonal CuInSe2. The structural and morphological
effects were observed with different substrates and potentials. The UV-visible absorption measurements indicated that the bandgap
of the CuInSe2 film is 1.15 eV.
? 2008 The Electrochemical Society. DOI: 10.1149/1.3005576 All rights reserved.
Manuscript submitted April 22, 2008; revised manuscript received August 8, 2008. Published November 4, 2008.
0013-4651/2008/1561/E8/5/$23.00 ? The Electrochemical SocietyCopper indium diselenide CuInSe2 has attracted considerable
interest for applications in optical and electronic devices, such as
diodes, originators of laser beams, light detectors, photoelectro-
chemical, and solar cells, etc.1,2 CuInSe2 has established itself as a