用于毫米波InPHBT建模的HICUM，-中国半导体分立器件分会.PDFVIP

用于毫米波InP HBT 建模的HICUM ， VBIC 和AHBT 模型 蒋盛烽，刘军 （杭州电子科技大学“射频电路与系统”教育部重点实验室，杭州310018) 摘要：选取了HICUM，VBIC 和AgilentHBT(AHBT)三种模型，介绍并分析了不同模型应用 在磷化铟（InP ）异质结双极型晶体管（HBT ）器件模型抽取中的特点。HBT 模型中的载流 子渡越时间方程直接决定模型用于 HBT 器件截止频率表征精度，进而影响 Pin Pout 和 IMD3 等非线性仿真精度。在HICUM，VBIC 和AHBT 模型忽略各自衬底寄生网络，保持 三类模型本征网络一致的情况下，着重分析了三种模型用于 InP HBT 器件载流子渡越时间 和特征频率曲线建模精度。其中HBT 器件发射极尺寸为8 μm ×3 μm ，频段为DC 到67 GHz 。最终评估结果表明，AHBT 比另外两种模型更适用于InP HBT 器件的模型抽取，同时 也发现AHBT 在电流更高区域的精度缺陷。 关键词：InP 异质结双极型晶体管（HBT ）；HICUM ；VBIC ；AgilentHBT(AHBT) ；毫米波 中图分类号：TN368.3 文献标识码：A 文章编号：1671-4776(2016)11-0709-05 HICUM, VBIC and AHBT Models for Millimeter Wave InP HBT Modeling Jiang Shengfeng，Liu Jun (Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018 ，China) Abstract:Three models were selected, i e.HICUM, VBIC and AgilentHBT(AHBT), and the model extraction characteristics of HICUM, VBIC and AHBT used in the InP heterojunction bipolar transistor (HBT) devices were introduced and analyzed.The characterization precision of the cut off frequency fT for the model used in the InP HBT devices was directly determined by the carrier transit time equation,thereby affecting the nonlinear simulation accuracy, such as Pin Pout and IMD3. The accuracy of the carrier transit time and fT modeling of VBIC, HICUM and AHBT used in the InP HBT devices were analyzed emphatically under the condition of maintaining the three models of the same intrinsic network and ignoring the substrate parasitic network.The emitter size of the HBT device is 8 μm×3 μm, and the frequency band is DC to 67 GHz. The final assessment result indicates that AHBT is more suitable for the model extraction of the InP HBT devices than VBIC and HICUM, while AHBT is not precise enough in higher current region. Key words:I