1D非周期缺陷地结构微带线.PDF

第 期 电 子 元 件 与 材 料 1 Vol.25 No.1 年 月 ELECTRONIC COMPONENTS MATERIALS 2006 1 Jan. 2006 研究与试制研究与试制 研究与试制研究与试制 R D 1 D 非周期缺陷地结构微带线 1,3 2 3 3 4 张友俊 张海峰 肖建康 李 英 陈 鸿 摘要:50 Ω DGS DGS DGS DGS 关键词: 中图分类号: TN455 TN713 文献标识码:A 文章编号:1001-2028 2006 01-0066-03 1 D Nonperiodic Defected Ground Structure for Microstrip Line 1, 3 2 3 3 4 ZHANG You-jun , ZHANG Hai-feng , XIAO Jian-kang , LI Ying , CHEN Hong (1. College of Information Engineering, Zhengzhou University, Zhengzhou 450052, China; 2. School of Electric and Information Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China; 3. School of Sciences, Shanghai University, Shanghai 200444, China; 4. Pohl Institute of Solid State Physics, Tongji University, Shanghai 200092, China) Abstract: A novel one-dimensional (1 D) nonperiodic defected ground structure (DGS) for 50 Ω microstrip line was presented. Different from the periodic DGS, the unit lattices of new DGS was not uniform. Two improved DGS circuits was designed, fabricated, and measured. Measurements show that the passband or enlarging stopband bandwidth can be obtained with the new DGS circuits. Key words: electronic technology; microstrip line; defected ground structure; passband; stopband 1999年 韩国学者J.I.Park 等人在研究(PBG-photonic 优势 自从DGS 提出以来 DGS 逐渐成为微波毫米 bandgap) 结构的基础上提