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c-Si异质结太阳电池(C-si heterojunction solar cell)
c-Si异质结太阳电池(C-si heterojunction solar cell)
This article is contributed by 888ronglin
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Volume 27, phase 7
July 2006
Solar journal
A resistance A
ENERGIA - E SoI. ARIs SINICA
V01.27. No. 7
, 2006
Article no. 0096 (20 HSS) 07 - O silicon 1
Thermofilament chemical vapor deposition n nc. Si: H film and nc. Si: H/c.S I heterojunction solar cells
Zhang qunfang 1, zhu meifang 1, liu fengzhen 1, liu jinlong 1, xu
Ying 2
(1. Department of physics of the graduate school of Chinese academy of sciences, Beijing 100039; 2. Beijing solar energy research institute, Beijing 100086)
Abstract: the hot filament chemical vapor deposition (Ⅲ looking) technique was used to prepare n type silicon nanocrystals (up a Si: H) thin film, systematically studies the deposition parameters, in particular
The influence of doped concentration on microstructure, electrical properties and defect states of thin film was obtained, and the n-type nc. S: H film was obtained. Preparation of nc - Si: H, c - Si dish
(Heterojunction wim IH IC field moves in the -l research has mostly er) solar cell structure, studied the Heterojunction structure parameters affect the performance of the battery, preliminary battery performance
The parameters are as follows: k = 483mV, _. = 29.5 m Ⅳ resistance, Jia = 70%, knocking = 10.2%.
Keywords: thermo-chemical vapor deposition; Nanocrystalline silicon; Heterojunction. Classification number of solar cells: r11 (514 document identification code: A)
0
lead
said
And depositional pressure (P). Four series of samples were prepared. The influence of doping on the defect density of thin film was studied by using photothermal deflection spectroscopy (PDs). The RamaIl spectra were measured by the T64000 Raman spectrometer, which obtained the thin membrane ratio through the spectrum of the R. Nc -- si: H/c -- si
HrI
Nanocrystalline s
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