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MILSTD883E BOND STRENGTH (DESTRUCTIVE (mil std 883 e键的强度(破坏性的)
MIL-STD-883E
METHOD 2011.7
BOND STRENGTH (DESTRUCTIVE BOND PULL TEST)
1. PURPOSE. The purpose of this test is to measure bond strengths, evaluate bond strength distributions, or determine
compliance with specified bond strength requirements of the applicable acquisition document. This test may be applied to the
wire-to-die bond, wire-to-substrate bond, or the wire-to-package lead bond inside the package of wire-connected microelectronic
devices bonded by soldering, thermocompression, ultrasonic, or related techniques. It may also be applied to bonds external to
the device such as those from device terminals-to-substrate or wiring board or to internal bonds between die and substrate in
non-wire-bonded device configurations such as beam lead or flip chip devices.
2. APPARATUS. The apparatus for this test shall consist of suitable equipment for applying the specified stress to the bond,
lead wire or terminal as required in the specified test condition. A calibrated measurement and indication of the applied stress in
grams force (gf) shall be provided by equipment capable of measuring stresses up to twice the specified minimum limit value,
with an accuracy of ±5 percent or ±0.25 gf, whichever is the greater tolerance.
3. PROCEDURE. The test shall be conducted using the test condition specified in the applicable acquisition document
consistent with the particular device construction. All bond pulls shall be counted and the specified sampling, acceptance, and
added sample provisions shall be observed, as applicable. Unless otherwise specified, for conditions A, C, and D, the sample
size number specified for the bond strength test shall determine the minimum sample size in terms of the minimum number of
bond pulls to be accomplished rather than the number of complete devices in the s
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