集成电路雪崩测试.ppt

* 上海新進半導體MOSFET電性量測 主持人:羅正忠 協同主持:林柏村 * The circuit architecture of Avalanche tester * Avalanche Failure Mode The parasitic component Associate with avalanche failure in power MOSFET Source region and Source contact resistance Rb. P-N junction capacitor Cdb Bipolar transistor Qb * * VDS versus Time IDS versus Time * Before the gate voltage falls below the threshold voltage, the drain current is conducted through the MOSFET channel. As the gate voltage is decreased, the channel is removal and the current is transferred from the channel to the drain-source diode. During the time that the drain-source voltage is rising, The drain source diode current is composed of displacement current form the formation of a depletion region at the junction region expands, the magnitude of the electric field in the depletion region increases. Eventually , the field becomes large enough to cause significant avalanche generation of carriers to occur, at which time the voltage ceases to rise and should become constant. This is the beginning of sustaining and the drain-source current is avalanche current sustained by the carriers generated within the depletion region. * Avalanche Energy * 1.4A VDS at Avalanche * 4A VDS at Avalanche * 2SK 1402 HITACHI 600V, 4A * Evaluate inductance * * * The result of measurement sample parameter 1.4A #1 1.4A #2 1.4A #3 1.4A #4 4A #1 4A #2 4A #3 4A #4 Device failure Pulse time(μs) 22 22.4 21.1 21.8 46 44 42.8 44.2 Device failure Current (A) 0.841 0.856 0.806 0.833 4.22 4.037 3.927 4.055 VBR(eff)(V) 700 690 700 700 700 700 695 710 VDD(V) 60 60 60 60 60 60 60 60 Inductance (mH) 1.57 1.57 1.57 1.57 0.65 0.65 0.65 0.65 Repetitive Avalanche energy (mJ) 0.607 0.63 0.558 0.596 6.33 5.793 5.486 5.837