12英寸晶圆 55nm 工艺后段介绍.ppt

* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * Dual Damascene T4Vx/T4Mx (4X DD, ITM or T2M1? T4Vx/T4Mx or T4M1?T4V2/T4M2) * T4Mx Film Dep T4Vx T4Mx * T4Vx Photo T4Vx T4Mx * T4Vx Etch T4Vx T4Mx T4Vx Etch: 1. Via Etch Stop at SiCN liner * T4Vx Etch T4Vx T4Mx T4Vx Etch: 1. Via Etch Stop at SiCN via stop layer 2. In-situ plasma dry strip Remove remaining PR * T4Mx BARC Coating T4Vx T4Mx * T4Mx BARC Etch Back T4Vx T4Mx * T4Mx Photo T4Vx T4Mx * T4Mx Etch T4Vx T4Mx T4Mx Etch: 1. Trench Etch Stop at SiN trench stop layer 2. In-situ plasma dry strip Remove remaining PR and BARC 3. LRM (Via bottom SiCN open) * T4Mx Etch T4Vx T4Mx T4Mx Etch: 1. Trench Etch Stop at SiN trench stop layer 2. In-situ plasma dry strip Remove remaining PR and BARC 3. LRM (Via bottom SiCN open) * T4Mx Etch T4Vx T4Mx T4Mx Etch: 1. Trench Etch Stop at SiN trench stop layer 2. In-situ plasma dry strip Remove remaining PR and BARC 3. LRM (Via bottom SiCN open) Trench bottom PEOX recess * T4Mx Barrier & Seed Dep T4Vx T4Mx * T4Mx Cu Plating T4Vx T4Mx * T4Mx Cu CMP T4Vx T4Mx * RV/APL/CB Passivation (T2M1 or T4M2?RV/APL/CB) Bonding Pad for chip-to-package connections Protecting the IC chip RV (Redistribution Via) APL(Alumina Pad Layer) CB (Chip Barrier) * RV Film Dep T4M2 * RV Photo T4M2 * RV Etch T4M2 RV Etch: 1. RV Oxide Etch Stop at SIN trench stop layer 2. In-situ plasma dry strip Remove remaining PR 3. LRM (Bottom SIN open) * RV Etch RV Etch: 1. RV Oxide Etch Stop at SIN trench stop layer 2. In-situ plasma dry strip Remove remaining PR 3. LRM (Bottom SIN open) T4M2 * RV Etch RV Etch: 1. RV Oxide Etch Stop at SIN trench stop layer 2. In-situ plasma dry strip Remove remaining PR 3. LRM (Bottom SIN open) T4M2 * A