2015第11课第8章半导体探测器2.pptx

;Optical Spectrum;半导体探测器的应用;电子的跃迁 初态到终态的跃迁 纯净半导体 吸收边通常把吸收限附近的吸收谱称为吸收边。它相应于电子由价带顶附近到导带底附近的跃迁。;直接跃迁和间接跃迁;1 What is a Photodetector?;How it works?;2 p-n结光电二极管原理;;当光照射在pn结部位时，由于光吸收使电子由价带激发到导带，分别在导带和价带生成电子和空穴。这些电子和空穴，在pn结区域耗尽层存在的内建电场的作用下，分别向n型区域和p型区域移动。这时，如果将p型区域和n型区域用外电路将其短路的话，外部电路就有由这些载流子产生的光电流。 ;8.3 PIN 型光电二极管;在p和n之间有一未掺杂i区。 由于掺杂浓度低，材料接近本征，在外加反偏置电场作用下，整个i区都为耗尽层。 光生载流子在电场作用，会很快地扫过耗尽层而分别到达p区或n区。 在外电路上形成光电流，其响应速度也就大大地得到了提高。;Photodetectors The pin Photodiode;In a p–n photodiode, The electric field in the depletion layer is not uniform. a p–i–n diode has the following two important characteristics: The depletion layer is almost completely defined by the intrinsic region; the electric field in the depletion layer is uniform across the intrinsic region;; Drift velocity vs. electric field for holes and electrons in Silicon.;(3) 响应时间;A large di reduces the RC time constant of the device by reducing Ci, but it increases the transit time τtr The transit time can be optimized with a chosen W. Because Ci can be reduced by reducing the device area, a p–i–n photodiode normally has an intrinsic region that has a thickness chosen to optimize the quantum efficiency and the transit time. For a high-speed p–i–n photodiode, the device area is made small enough that the RC time constant is not a limiting factor of its frequency response.;A large di reduces the RC time constant of the device by reducing Ci, but it increases the transit time τtr The transit time can be optimized with a chosen W. Because Ci can be reduced by reducing the device area, a p–i–n photodiode normally has an intrinsic region that has a thickness chosen to optimize the quantum efficiency and the transit time. For a high-speed p–i–n photodiode, the device area is made small enough that the RC time constant is not a limiting factor of its frequency response.;（8.4）探测器量子效率和响应度;;8.6 异质结中的光电流;;;1 透过d2区域 2 在x1区域吸收 3 内建场作用下的漂移;;窄带区对电流的总贡献：;;边界条件： X=d2-x2: Dp=0 (到达空间电荷区边界立刻被电场拉走。） ;(8.18);;;它具有隐蔽性好、虚警率低、不需低温冷却