电气工程.嵌入式NANDFLASH读写.docVIP

NAND FLASH 读写 一、实验目的 1．学习存储器存储原理。 2．掌握NAND FLASH 与NOR FLASH的区别。 3．掌握读写NAND FLASH的方法。 二、实验内容 本次实验使用ADS1.2集成开发环境，编写44B0的I/O驱动程序，结合NAND FLASH读写程序，完成对NAND FLASH的读写，并通过串口调试工具对NAND FLASH进行命令控制以及回显从NAND FLASH读取的数据。 三、预备知识 1．用ARM ADS1.2集成开发环境，编写和调试程序的基本过程。 2．ARM应用程序的框架结构。 3．深入了解NAND FLASH的工作原理。 4．Samsung 44B0数据手册中的I/O控制介绍。 5．NAND FLASH K9F5608数据手册。 四、实验设备及工具 硬件：ARM嵌入式开发板、用于ARM7TDMI的JTAG仿真器、PC机Pentumn100以上 软件：PC机操作系统win98、Win2000或WinXP、ARM ADS1.2 集成开发环境、仿真器驱动程序、PC串口调试工具、实验原理及说明 五、实验原理 1．NAND vs. NOR Beside the different silicon cell design, the most important difference between NAND and NOR Flash is the bus interface. NOR Flash is connected to a address / data bus direct like other memory devices as SRAM etc. NAND Flash uses a multiplexed I/O Interface with some additional control pins. NAND flash is a sequential access device appropriate for mass storage applications, while NOR flash is a random access device appropriate for code storage application.NOR Flash can be used for code storage and code execution. Code stored on NAND Flash cant be executed frome there. It must be loaded into RAM memory and executed from there. NOR NAND Interface Bus I/O Cell Size Large Small Cell Cost High Low Read Time Fast Slow Program Time single Byte Fast Slow Program Time multi Byte Slow Fast Erase Time Slow Fast Power consumption High Low, but requires additional RAM Can execute code Yes No, but newer chips can execute a small loader out of the first page Bit twiddling nearly unrestricted 1-3 times, also known as partial page program restriction Bad blocks at ship time No Allowed Some facts about write speed. NAND is typically faster than NOR for large writes. A typical NOR write is 10uS per word, which results in 1280uS per 512 bytes on a 32-bit bus. A typical NAND write is 50nS per byte + 10uS page seek + 200uS program which results in 236uS per 512 bytes on a 8 bit bus. As NAND Flash is cheaper than NOR Flash and has a very slim inter