半导体芯片生产流程GPP流程简介英文版课件.ppt

GPP Process Introduction Wafer Cleaning Organic contamination有机污染物 Metal contamination 金属污染物 N type substrate层 Diffusion 扩散 N+ layer- Phosphorus doping（磷掺杂） P+ layer- Boron doping（硼掺杂） Dopant source: Paper doping Liquid doping Solid doping Surface Preparation- Photo Process（显影制程） Photo Process - Grid Photo Photo resist - HMDS, coating, soft baking Alignment exposure曝光 Development and hard baking Oxide Strip剥去 Stripping脱模 photo resist Stripping oxide氧化物 Passivation钝化 (1) - SIPOS / MTO Wafer cleaning: RCA cleaning SIPOS / MTO Passivation (3) - Firing Firing - above 800° C （开火，生火，烧窑） Passivation (4) - CVD Oxide CVD oxide: (LTO, Low Temperature Oxidation) Contact Etch Oxide etch SIPOS etch Metalization Nickel plating / sintering Gold plating Dicing As-cut wafer Dicing EPI（Epitaxy外延） wafer * 8/11/2011 * * N N+ P+ N N+ P+ Oxide on Silicon Oxidation: Si + O2 (H2O) CVD oxide: (LTO, Low Temperature Oxidation) Silicon Oxide N N+ P+ N N+ P+ N N+ P+ N N+ P+ N N+ P+ N N+ P+ N N+ P+ N N+ P+ N N+ P+ Tape mounting Dicing Tape demounting NI/AU SIO2 SIPOS Glass N N+ P+ Tape mounting Dicing Tape demounting NI/AU SIO2 SIPOS Glass * *