掺钴、锰V2O5薄膜电极的研究-化学专业论文.docxVIP

掺钴、锰V2O5薄膜电极的研究-化学专业论文.docx

  1. 1、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。。
  2. 2、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载
  3. 3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
  4. 4、该文档为VIP文档,如果想要下载,成为VIP会员后,下载免费。
  5. 5、成为VIP后,下载本文档将扣除1次下载权益。下载后,不支持退款、换文档。如有疑问请联系我们
  6. 6、成为VIP后,您将拥有八大权益,权益包括:VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
  7. 7、VIP文档为合作方或网友上传,每下载1次, 网站将根据用户上传文档的质量评分、类型等,对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档
查看更多
掺钴、锰V2O5薄膜电极的研究-化学专业论文

重庆大学 重庆大学硕士学位论文 英文摘要 II II ABSTRACT Vanadium pentoxide (V2O5) has become a very promising cathode material for lithium-ion batteries because of its advantages like high voltage, high specific capacity, abundant resources, low price and so on. However, the poor structure stability and low conductivity have limited its application in the field of lithium-ion batteries. In this paper, both Co and Mn doped V2O5 thin films were prepared by sol-gel method, which morphologies and electrochemical performances were systematic researched by means of XRD, SEM, TEM, TG-DTA, CV and CP. Firstly, results from XRD, SEM, TEM and TG-DTA showed that the crystal structure of V2O5 has not been changed by doping Co and Mn. However, the V2O5 thin film composed of nanosheet structure roundlike has been converted to rectangle and each nanosheet was composed of nanorods with diameter less than 30 nm. While Co and Mn doped V2O5 thin films are composed of nanosheets with the length of ~500 nm, width of ~170 nm, thickness of ~85 nm, and the length of~ 650 nm, width of ~120 nm, thickness of ~60 nm, respectively. The morphology of doped V2O5 thin film is helpful to reduce the strain during Li+ insertion/de-insertion and prevented the structure changes. Besides, it is beneficial to improve the discharge specific capacity and reduce capacity fading. In addition, some of V atoms are replaced by Co and Mn, resulting the enhancement of electrochemical properties due to the increases of layer gap between a axis and c axis in crystal. And doping gives rise to the generation of oxygen vacancy, reasulting the improvement of materials specific capacity. Secondly, the sol-gel’s concentration and annealing time have effects on the electrochemical performance of V2O5 thin film. It is found that optimum concentration of sol-gel is 0.008 mol/L. Under current density with 400 mA/g, the prepared V2O5 thin film owns a discharge specific capacity of 663mAh/g with 1.09% fading per cycle. The best annealing time is 2

您可能关注的文档

文档评论(0)

peili2018 + 关注
实名认证
文档贡献者

该用户很懒,什么也没介绍

1亿VIP精品文档

相关文档