化学配比对磷化铟中本征缺陷、杂质特性的影响-微电子学与固体电子学专业论文.docxVIP

Thesis Submitted to Hebei University of Technology for The Master Degree of Microelectronics and Solid State Electronics EFFECTS OF STOICHIOMETRY ON THE INTRINSIC DEFECTS AND IMPURITY CHARACTERISTICS IN INP by Yang Juan Supervisor: Prof. Yang Ruixia December 2014 This work supported by the National Science and Technology Major Project of China (No. 2011ZX01006-001) and the National Natural Science Foundation of China (No.. 摘 要 化合物半导体材料磷化铟在半导体行业中占据了重要的地位。磷化铟具有的一些 优良性能使得它在多个领域得到了广泛应用。而器件优良性能的实现有赖于磷化铟材 料质量的高低。化学配比是影响材料质量的因素之一。不同的化学配比会对磷化铟中 杂质、缺陷产生不同的影响。本文采用不同测试方法对富磷、近化学配比、富铟不同 的化学配比对掺硫、掺铁磷化铟中杂质、缺陷特性的影响进行了研究。采用光致荧光 谱测试技术对磷化铟中硫及铁杂质分布进行分析；采用 XRD 技术对掺硫及掺铁磷化 铟的结晶质量进行表征；运用非接触电阻率及霍尔效应测试法对磷化铟的电学特性进 行研究；用腐蚀法研究磷化铟中的缺陷。 对掺硫磷化铟晶片的测试研究中，光致荧光谱及 XRD 实验表明，近化学配比晶 片的发光波长变化最小，硫分布均匀性最好；富铟晶片次之；富磷晶片最差。硫杂质 的掺入使得材料发光峰峰位发生变化，发光波长变短，禁带宽度变大。 在近化学配比、富铟掺铁磷化铟的研究中，光致荧光谱测试表明近化学配比掺铁 晶片发光强度均匀性优于富铟晶片，晶锭头部晶片优于尾部晶片。掺铁磷化铟晶片发 光强度呈现出中间高、外围低的特点，认为是由凸向熔体的固液界面造成铁浓度中间 低、边缘高的分布特点。XRD 结果表明近化学配比晶片结晶质量优于富铟晶片，近 化学配比晶片半高宽变化较富铟晶片小。非接触电阻率及光致荧光谱测试结果表明， 铁的分布与电阻率分布存在一定对应关系，铁浓度高处电阻率较大，半绝缘性更好。 霍尔效应测试结果表明，晶锭尾部晶片的电阻率值高于头部晶片，而电阻率均匀性低 于头部晶片。位错腐蚀结果表明，近化学配比晶片位错密度少于富铟晶片，在垂直于 晶锭生长方向切下的晶片中位错密度呈现边缘处高，中心部位低的特征。 关键字：掺硫磷化铟 掺铁磷化铟 化学配比 杂质 缺陷 I PAGE PAGE II PAGE PAGE III ABSTRACT Compound semiconductor material InP has played an important role in the semiconductor industry. With some excellent characteristics, InP has been widely used in many fields. The realization of good performances of the devices depends on the quality of InP. Stoichiometry is a factor influencing the material quality. Different stoichiometry has distinct impacts on the impurities and defects. In this paper, different measurements were performed on the P-rich, nearly-stoichiometric and In-rich S-doped and Fe-doped InP, and the effects of different stoichiometry on the impurities and defects were investigated. PL Mapping was carried out to investigate the distribution of S and Fe; Crystal quality was characterized by XRD; The electric properties of InP