硅微波单片集成电路技术研究-微电子学与固体电子学专业论文.docxVIP

硅微波单片集成电路技术研究 硅微波单片集成电路技术研究 河北工业大学硕士学位论文 河北工业大学硕士学位论文 ii ii RESEARCH ON SILICON MICROWAVE MONOLITHIC INTEGRATED CIRCUIT ABSTRACT Microwave Monolithic Integrated Circui（t MMIC）is a kind of high frequency device arising with the development of ion implantation and BJT’s self-aligned technology. Comparing to the Hybrid Integrated Circuit (HIC), Si-MMIC has many advantages such as smaller size and lower cost, excellent consistency of circuit, needn’t adjustment, convenient to use, easy to batch production, high reliability and long life.The future application of MMIC turns to the wideband, high gain and multifunction. Base on the theories of microwave circuit and silicon BJT, silicon microwave low noise amplifier (LNA) monolithic integrated circuit was designed and manufactured. Circuit of three stages cascaded configuration was chosed. The first stage was to control the noise figure as input, and following two stages were Darlington configuration to increase power gain. ADS software was used to simulate and optimize the resistances’ value after calculating and builting a BJT model of circuit. Many advanced technology such as double epitaxial layer, trench isolation technology, equi-planar and self-aligned submicron technology were adopted to meet the target of high gain and wideband. The MMIC’s performance has been obtained under the conditions of VCC=5.5V and I=16mA. 3dB frequency bandwidth is DC～0.8GHz. At the frequency band of DC～0.8GHz, the power gain is 23dB, the noise figure is less than 3dB, the gain flatness is less than±1.5dB, input and output VSWRs are less than 2.4dB. KEY WORDS: microwave monolithic integrated circuit, hybrid integrated circuit, bipolar junction transistor, low noise amplifier. 符号说明 beA ——双极晶体管基区面积，μm2。 A ——双极晶体管发射区面积，μm2。 b e BVCBO——双极晶体管共基极接法击穿电压，V。 BVCEO——双极晶体管共发射极接法击穿电压，V。 BJT——双极晶体管。 CTE——双极晶体管发射极势垒电容，F。 CTC——双极晶体管集电极势垒电容，F。 Cπ——双极小信号等效电路中输入电容，F。 Cu——双极晶体管小信号等效电路中集电极-基极电容，F。 CJS——双极晶体管小信号等效电路中集电极-衬底电容，F。 CJS0——单位面积衬底 pn