太阳能级多晶硅质量参数的不同表述.docVIP

PAGE PAGE 1 太阳能级多晶硅产品质量参数的不同表述例 Ⅰ、Silfab CO., The PV grade polysilicon will require is detailed below: Dopants content: 9N Total metal content : 7N Carbon content: 6N Ⅱ、Hoku Bulk Surface Impurity Specifications(PV grade) 1.Description Solar grade polycrystalline silicon used for applications in the photovoltaic industry meeting specifications below. 2.Bulk Surface Impurity Specifications Type Bulk Elements Value Unit Acceptors Boron/Aluminum (B+AI) ≦0.20 ppba Donors Phosphorus /Arsenic ( P + As) ≦0.90 ppba Carbon (C) (for 2009 Products) ≦2.0 ppma Carbon (C) (for the Products to be delivered in And after January 2010) ≦1.0 ppma TotaI Metals (Fe,Cu,Ni,Cr,zn,Na) ≦30 ppbw 3.Size Specifications Nominal Chunk Size: 25 mm approximately 1 %by weight 25-50 mm approximately 30 % by weight 50-100 mm approximately 70 % by weight 4.Certification Elemental Analysis Certification purified to the following analysis: ASTM F 1723. ASTM F 1389. ASTM F 1391. Ⅲ、SOLMIC CO., The table below shows the guaranteed quality of SOG polysilicon suitable for monocrystalline solar cells and MEG polysilicon.The total quality is ≥8N,with the exception of carbon. The purity will be measured after drilling small sample rod out of the polysilicon rod and turned into a small monocrystalline ingot by FZ method. The method and measurement technique will be done according industry standard SEMI MF 1723-1104（Handling and measurement procedure）.MF 1389（acceptors and donors）and MF 1391（carbon）measurement. Bulk metal contamination will be measured by Low Temperature Photoluminescence（LTP） and surface metal contamination via layer etching and measuring by gas Chromatography（GC）and/or ICPMS MEG polysilicon SOG polysilicon Mono cell Poly cell Donor ppba ＜0.1 ＜0.5 ＜5.0 Acceptor