离线式开关电源控制芯片功率器件与部分子电路的设计.pdfVIP

万方数据 摘要 摘 要 本文对离线式开关电源控制芯片的功率器件及部分子电路进行了设计。该开 关电源管理芯片内部集成了耐压达 730V 的开关功率 MOS 管，额定工作频率为 60kHz ，最大输出功率为8W，内部集成有保护电路，并以简单的外围元件即可构 成完整的开关电源解决方案。 由于芯片中采用了陈星弼教授的专利，不采用介质隔离或PN 结隔离（即BCD 工艺）技术，而用普通CMOS 工艺将高压功率器件与低压CMOS 控制电路集成在 一块硅片上的方法，使功率集成电路的成本大大降低。 论文首先简单介绍了开关电源电路常用的反激式拓扑结构，然后详细介绍了 耐压730V 的开关功率VDMOS 的设计过程。接着，描述了该开关电源管理芯片中 部分子电路的原理和设计方法，如Regulator 模块、振荡器模块与Trim 模块，并简 述了各模块的版图设计，对电流控制回路反馈响应速度进行了简要分析，最后对 该开关电源管理芯片的总体性能进行了仿真。 关键词：开关电源，VDMOS ，Regulator ，Trim，振荡器，反馈。 I 万方数据 ABSTRACT ABSTRACT Parts of sub-circuit of a monolithic off-line SMPS (switching mode power supply) management chip are researched and designed in this thesis. A power MOSFET with breakdown voltage exceeds 730V is integrated on this chip . The working frequency of this chip is fixed at 60kHz, and the maximum output power is about 8W. In addition, this chip includes some protective circuits, thus just some simple external components are needed to provide a complete solution of the switching power supply. Since this chip is utilized by the patent of Professor Xingbi Chen which uses the ordinary CMOS process to integrate high voltage and low voltage devices, without using dielectric isolation or PN junction isolation (BCD process) technology, thus the cost of power integrated circuits is greatly reduced. First of all, this thesis briefly introduces the circuit of fly-back topology which is widely used in SMPS, and then describes the design process of the power MOSFET with breakdown vol