硅衬底GaN基垂直结构LED应力与I-V特性分析.pdfVIP

摘要 不同温度下的I-V 特性曲线和外量子效率 （EQE ）曲线，结果表明由于GaN 基 LED 外延薄膜缺陷密度以及芯片结构的不同使得其I-V 特性和外量子效率（EQE ） 变化趋势有所差别，且两者的变化趋势也存在一定关联。另外发现理想因子与 注入强度和温度存在密切的关系：理想因子随注入强度的增大呈现先减小后增 大的趋势，存在一个理想因子最低值；而随温度的升高理想因子呈现减小的趋 势。不同温度下，理想因子的最低值一定程度上能够反映外延薄膜的缺陷密度。 关键字：GaN ；LED ；金属迁移；应力；理想因子 III 万方数据 Abstact ABSTRACT Because GaN-based LED is the core device of solid state lighting,it has been widely studied recently.GaN bulk single crystal is expensive and difficult to grow,so heterogeneous substrate is commonly used for GaN-based LED expitaxy.At present,three technical routes of solid state lighting on different substrates have been developed,i.e.sapphire,silicon carbide and silicon.With the late beginning of reaserch,GaN-based LED on silicon substrate has become a hotspot in academia and industry due to its low cost,and good performance.Because the visible light can be absorbed by silicon substrate,so substrate transfer technology is commonly used to fabricate GaN-based vertical thin-film LED on silicon substrate.Vertical thin-film LED has many advantages,such as high light extraction efficiency,good heat dissipation,homogeneous current distribution.Nevertheless,there are some problems haven't got deeply understanded because of the short developing history.For example:(1) Silver mirror is commonly used in vertical thin-film LED preparation.Whether the silver atoms migrate to the active region under workin