SEMI MF1630-2007 国外国际规范.pdf

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SEMI MF1630-1107 TEST METHOD FOR LOW TEMPERATURE FT-IR ANALYSIS OF SINGLE CRYSTAL SILICON FOR III-V IMPURITIES This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on September 5, 2007. It was available at in October 2007 and on CD-ROM in November 2007. Originally published by ASTM International as ASTM F 1630-95. Previously published July 2004. 1 Purpose 1.1 Electronic grade polysilicon producers and users rely on LTFT-IR spectroscopy to evaluate polysilicon for quality assurance and research purposes. 1.2 LTFT-IR spectroscopy identifies and quantitates boron, phosphorus, aluminum, arsenic, indium, antimony, and gallium. 1.3 LTFT-IR spectroscopy can be applied to FZ, CZ, or other single crystal silicon (either doped or undoped) up to the concentration limits given in § 2.2. 1.4 The measurement of carbon in silicon at low temperature can be accomplished concurrently in accordance with SEMI MF1391. The carbon can be measured at lower concentrations at <15 K than is possible at room temperature because the two-phonon band transmission is increased by a factor of two allowing greater throughput to the detector that results in an increased signal to noise ratio. Also the carbon adsorption band narrows from a FWHM of 5 to 6 cm−1 to a FWHM of 2.5 to 3.0 cm−1 at these low temperatures. 2 Scope 2.1 This test method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. 2.2 This test method can be used for silicon in which the impurity/dopant concentrations are between 0.01 ppba and 5 ppba for each of the electrically active elements. 2.3 The concentration for each i

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