长程光纤通讯光源材料InGaAsN之特性介绍与近代发展.ppt

長程光纖通訊光源材料 InGaAsN 之特性介紹與近代發展 Reporter: 陳秀芬 Adviser: 郭艷光 博士 Date: 2004/01/06 92 學年度第一學期半導體雷射期末報告 2004/01/06 國立彰化師範大學藍光實驗室 陳秀芬 2 Outline Introduction Comparison of InGaAsN, AlGaInAs, and InGaAsP Physics of InGaAsN Modern research on InGaAsN Conclusion 2004/01/06 國立彰化師範大學藍光實驗室 陳秀芬 3 Introduction ? Long-wavelength (1.3/1.55 ? m) quantum-well lasers based upon InGaAsP materials are widely used in optical communications applications, but the temperature dependence of these lasers remains an issue that limits their performance at high temperature. ? Thus, in recent years, different material systems have been sought to improve the active region performance, including AlGaInAs and InGaAsN . 2004/01/06 國立彰化師範大學藍光實驗室 陳秀芬 4 Comparison of InGaAsN, AlGaInAs, and InGaAsP InGaAsN AlGaInAs InGaAsP Characteristic Temperature, T 0 (K) 120 90 60 The rate of the gain peak shift (nm/K) 0.33 0.55 0.59 Band offset ratio ( ? E c / ? E v ) 3.7 2.57 0.67 m e / m 0 0.08 0.05 0.06 m hh / m 0 0.36 0.48 0.49 Material Property 2004/01/06 國立彰化師範大學藍光實驗室 陳秀芬 5 Physics of InGaAsN --- Composition & GaAs substrate ? GaN (~4.5?) and GaAs (5.65?) have very different lattice constants, which means that GaAsN layers grown on a GaAs substrate should be highly strained. By adding indium we can grow InGaAsN layer completely lattice matched to GaAs substrate . ? VCSEL ? When substituting just 1% N for As in GaAs, the band- gap energy decreases from 1.42 to 1.25 eV at room temperature, although the GaN band-gap energy is much higher ~3.43 eV . This is due to the coupling of a nitrogen level with the ? conduction band . 2004/01/06 國立彰化師範大學藍光實驗室 陳秀芬 6 Physics of InGaAsN --- Effective mass ? Because the nitrogen states and the electron states in the conduction band repulse each other, electron effective mass of InGaAsN is about 0.08 m 0 and is about 1.6 times that of AlGaInAs. ? These values of effective masses result in the higher transparency carrier density of InGaAsN. ? However, the large electron effect