678733sdr_timing_diagram_feb_04文档精选手册.pdfVIP

TIMING DIAGRAM CMOS SDRAM SDRAM Timing Diagram * Samsung Electronics reserves the right to change products or specification without notice. ELECTRONICS TIMING DIAGRAM CMOS SDRAM Single Bit Read - Write - Read Cycle(Same Page) @CAS Latency=3, Burst Length=1 Power Up Sequence Read Write Cycle at Same Bank @Burst Length=4, tRDL=1CLK Read Write Cycle at Same Bank @Burst Length=4, tRDL=2CLK Page Read Write Cycle at Same Bank @Burst Length=4,tRDL=1CLK Page Read Write Cycle at Same Bank @Burst Length=4,tRDL=2CLK Page Read Cycle at Different Bank @Burst Length=4 Page Write Cycle at Different Bank @Burst Length=4, tRDL=1CLK Page Write Cycle at Different Bank @Burst Length=4, tRDL=2CLK Read Write Cycle at Different Bank @Burst Length=4 Read Write Cycle With Auto Precharge l @Burst Length=4 Read Write Cycle With Auto Precharge ll @Burst Length=4 Clock Suspension DQM Operation Cycle @CAS Letency=2, Burst Length=4 Read Interrupted by Precharge Command Read Burst Stop Cycle @ Full Page Burst Write Interrupted by Precharge Command Write Burst Stop Cycle @ Full Page Burst, tRDL=1CLK Write Interrupted by Precharge Command Write Burst Stop Cycle @ Full Page Burst, tRDL=2CLK Burst Read Single bit Write Cycle @Burst Length =2 Active/precharge Power Dower Down Mode @CAS Latency=2 Burst Length=4 Self Refresh Entry Exit Cycle Exit Cycle Mode Register Set Cycle Auto Refresh Cycle ELECTRONICS TIMING DIAGRAM C