61WV102416ALL(ISSI_1M x 16_SRAM)文档精选手册.pdfVIP

IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY JUNE 2009 FEATURES DESCRIPTION • High-speed access times: The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL 8, 10, 20 ns are high-speed, 16M-bit static RAMs organized as 1024K • High-performance, low-power CMOS process words by 16 bits. It is fabricated using ISSIs high-perform- ance CMOS technology. This highly reliable process coupled • Multiple center power and ground pins for greater with innovative circuit design techniques, yields high-perfor- noise immunity mance and low power consumption devices. • Easy memory expansion with CE and OE op- tions When CE is HIGH (deselected), the device assumes a • CE power-down standby mode at which the power dissipation can be • Fully static operation: no clock or refresh reduced down with CMOS input levels. required • TTL compatible inputs and outputs Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE . The active LOW • Single power supply Write Enable (WE) controls both writing and reading of the VDD 1.65V to 2.2V (IS61WV102416ALL)