Ⅲ-Ⅴ族三元化合物半导体材料的光学特性研究的中期报告.docxVIP

Ⅲ-Ⅴ族三元化合物半导体材料的光学特性研究的中期报告 摘要： Ⅲ-Ⅴ族三元化合物半导体材料具有广泛的应用前景，然而其光学特性研究仍需深入探究。本研究通过制备AlInGaN多量子阱结构样品，对其光学性能进行了研究。利用变温荧光光谱仪及紫外可见光谱仪对样品进行测试，得到了其荧光光谱和吸收光谱，并分析了其激子本征吸收和受控生长技术对其荧光特性的影响。研究结果表明，受控生长技术可提高样品晶体质量，从而提高其荧光强度，且在样品中添加适量的铝元素可以有效的增强其荧光强度。 关键词：Ⅲ-Ⅴ族三元化合物半导体材料，光学特性，多量子阱结构，激子本征吸收，受控生长技术。 Abstract: III-V ternary compound semiconductor materials have wide application prospects, but their optical properties still need further exploration. In this study, the optical properties of AlInGaN multi-quantum well structures were investigated by preparing samples and testing them using a temperature-dependent fluorescence spectrometer and a UV-visible spectrometer. The fluorescence spectrum and absorption spectrum were obtained, and the influence of exciton intrinsic absorption and controlled growth technology on its fluorescence characteristics was analyzed. The results showed that controlled growth technology can improve the crystal quality of the sample, thereby improving its fluorescence intensity, and adding an appropriate amount of aluminum element to the sample can effectively enhance its fluorescence intensity. Keywords: III-V ternary compound semiconductor materials, optical properties, multi-quantum well structure, exciton intrinsic absorption, controlled growth technology.