SiC晶片研磨加工表面层损伤检测研究的开题报告.docxVIP

SiC晶片研磨加工表面层损伤检测研究的开题报告

【摘要】

SiC晶片具有优异的热导率、硬度、耐磨性和高温稳定性等特性，被广泛应用于电力电子和无线通信等领域。然而，在SiC晶片研磨加工过程中，表面层往往会产生损伤，影响其性能和寿命。因此，研究SiC晶片研磨加工表面层损伤检测技术，对于提高其质量和可靠性具有重要意义。

本文将对SiC晶片研磨加工表面层损伤检测技术进行研究，主要包括以下几个方面：(1)国内外SiC晶片研磨加工技术的研究现状；(2)SiC晶片研磨加工表面层损伤机理及影响因素；(3)现有的SiC晶片研磨加工表面层损伤检测技术的优缺点；(4)基于红外热成像技术的SiC晶片研磨加工表面层损伤检测方案，包括测试装置、测试方法、数据处理等。

本研究的目的是为SiC晶片研磨加工过程中表面层损伤的检测提供一种新方法，具有一定的理论和实践意义。

【关键词】SiC晶片；研磨加工；表面层损伤；红外热成像；检测技术

【Abstract】

SiCchipshaveexcellentcharacteristicssuchashighthermalconductivity,hardness,wearresistance,andhightemperaturestability,andarewidelyusedinthefieldsofpowerelectronicsandwirelesscommunication.However,duringthegrindingprocessofSiCchips,surfacelayerdamageoftenoccurs,whichaffectstheirperformanceandservicelife.Therefore,theresearchonsurfacelayerdamagedetectiontechnologyinthegrindingprocessofSiCchipsisofgreatsignificanceforimprovingtheirqualityandreliability.

ThisarticlewillstudythesurfacelayerdamagedetectiontechnologyinthegrindingprocessofSiCchips,mainlyincludingthefollowingaspects:(1)theresearchstatusofSiCchipgrindingtechnologyathomeandabroad;(2)surfacelayerdamagemechanismandinfluencingfactorsofSiCchipsinthegrindingprocess;(3)advantagesanddisadvantagesofexistingsurfacelayerdamagedetectiontechnologyforSiCchipgrinding;(4)surfacelayerdamagedetectionschemebasedoninfraredthermographytechnology,includingtestdevices,testmethods,anddataprocessing.

ThepurposeofthisresearchistoprovideanewmethodfordetectingsurfacelayerdamageinthegrindingprocessofSiCchips,whichhascertaintheoreticalandpracticalsignificance.

【Keywords】SiCchip;grindingprocess;surfacelayerdamage;infraredthermography;detectiontechnology