MOS工艺讲解--课件课件.pptVIP

VDDP阱工艺N阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si*ppt课件掩膜1：P阱光刻P-wellP-wellN+N+P+P+N+P+N-SiP*ppt课件具体步骤如下：1．生长二氧化硅（湿法氧化）：Si(固体)+2H2O?SiO2（固体）+2H2*ppt课件*ppt课件2．P阱光刻：涂胶腌膜对准曝光光源显影*ppt课件*ppt课件硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-well3．P阱掺杂：*ppt课件*ppt课件离子源高压电源电流积分器离子束*ppt课件掩膜2：光刻有源区有源区：nMOS、PMOS晶体管形成的区域P+N+N+P+N-SiP-wellP-wellP-well淀积氮化硅光刻有源区场区氧化去除有源区氮化硅及二氧化硅SiO2隔离岛*ppt课件有源区depositednitridelayer有源区光刻板N型p型MOS制作区域(漏-栅-源)*ppt课件P-well1.淀积氮化硅：氧化膜生长（湿法氧化）P-well氮化膜生长P-well涂胶P-well对版曝光有源区光刻板2.光刻有源区：*ppt课件P-well显影P-well氮化硅刻蚀去胶3.场区氧化：P-well场区氧化（湿法氧化）P-well去除氮化硅薄膜及有源区SiO2*ppt课件1*1*1*1*1*1*1*1*1*1*1*MOS晶体管的动作MOS晶体管实质上是一种使电流时而流过，时而切断的开关n+n+P型硅基板栅极（金属）绝缘层（SiO2）半导体基板漏极源极N沟MOS晶体管的基本结构源极(S)漏极(D)栅极(G)*ppt课件siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxideMOS晶体管的立体结构*ppt课件在硅衬底上制作MOS晶体管siliconsubstrate*ppt课件siliconsubstrateoxidefieldoxide*ppt课件siliconsubstrateoxidephotoresist*ppt课件ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide*ppt课件非感光区域siliconsubstrate感光区域oxidephotoresist*ppt课件Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist显影*ppt课件siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蚀*ppt课件siliconsubstrateoxideoxidesiliconsubstratefieldoxide去胶*ppt课件siliconsubstrateoxideoxidegateoxidethinoxidelayer*ppt课件siliconsubstrateoxideoxidepolysilicongateoxide*ppt课件siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate*ppt课件siliconsubstrateoxideoxidegategatephotoresistSc