基片温度对射频磁控溅射碲化铋薄膜微结构和表面形貌的影响.pdfVIP

32 6 504 CHINESE JOU NAL OF VACUUM SCIENCE ANDTECHNOLOGY 2012 6 杨鹏辉 曾志刚 胡志宇* ( 200444) Influence of Substrate Temperature on Growth of RF Sputtered Bismuth Telluride Films * Yang Penghui,Zeng Zhigang,Hu Zhiyu ( Institute of N anoMicroE nergy , Shanghai University , Shang hai 200444, China) Abstract The bismuth telluride films were deposited by Fmagnetron sputtering on substrateof Si ( 100) wafer,2 inch in diameter.The impacts of thegrowth conditions,such as the substratetemperature,sputtering power,and pressure, on themicrostructures, surface morphologies, and interface properties of the bismuth telluride films were evaluated.The films were characterized with X-ray diffraction,and scanning electron microscopy.Theresults show that the substrate tem- perature strongly affects the microstructures and phase structure of the films.Depending on an increase of the substrate temperature,the grains grew to avarying degree.At 100e ,hexagonal Bi Te phase dominatedwith c-axis as thepreferred 2 3 growth orientation.At 250e ,the BiTe phase changed into BiTe phasewith formation of strip-likegrains on the surface. 2 3 In addition,the substrate temperature markedly influences the interfacial stress distribution. Keywords Bismuth telluride,Thermoelectric thin film,Magnetron sputtering,Substratetemperature