功率MOSFET参数测试仪的设计.pdfVIP

第29 卷 第4 期 电 子 器 件 V ol. 29 No. 4 2006 年12 月 Chinese Journal Of Elect ron Dev ices Dec. 2006 Design of Measuring Power MOSFET Parameter Instrument X IA X ing-long , ZH A N G X iong, W U Zhong (Dep artment of Electronic E ngineer ing , Southeast Uni ersity , N anj ing 2 10096, Ch ina) Abstract: Measuring pow er M OSF ET param et er inst rument is designed t o measure t he most par am et ers of Pow er M OSFET ( such as t hr esho d vo t age, f orw ard t ransconductance and so o n) . T his paper focu ses on som e measuring met ho ds and t he rea izatio n of hardw are design . T he Paramet er M easur ing system o f Po w- er MOSFET is designed based on a sing e chip . Wit h t he he p o f t he contr o ing pro grams added t o t he sys- t em and t he w o rk o f some hardw ar e experiment s and soft w are debugg ing , t he desig ned system can measure thresho d v o t age, f orw ard t ransco nduct ance, gat e- so urce eakage curret , drain cur rent wit h Vgs = 0 , the breakdow n v o t ag e bet w een drain and so urse successfu y. Key words: pow er; M OSF ET ; instr um ent f or measur ing param et ers EEACC:2 70H;7310F MOSFET 夏兴隆, 张 雄, 吴 忠 ( , 210096) : M OSF ET M OSFET ( ) , M OSFET , , , , M O SF ET : ; M OSFET ; :TN432;TM933 :A :100 -9490( 2006)04-10 8-03 M OSFET , M OSF ET 1 : , , , M OSF ET , , 图1 测试仪系统组成框图 M OSF ET , 1 MOSFET AT 89C51 , , DA C MOSFET M OSF ET , A DC , ( 1) , AT 89C51 : 2005- 10- 15 : ( 19 83-)