溅射条件对ZnOAl薄膜生长和性能的影响.pdfVIP

Trans. Nonferrous Met. Soc. China 25(2015) 1517−1524 Effect of sputtering conditions on growth and properties of ZnO:Al films Qian SHI1,2, Ming-jiang DAI1,2, Song-sheng LIN1,2, Hui-jun HOU1,2, Chun-bei WEI1,2, Fang HU1,2 1. Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology, Guangzhou 510651, China; 2. New Materials Department, Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651, China Received 7 May 2014; accepted 25 March 2015 Abstract: Al-doped zinc oxide (AZO) films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target−substrate distance on the electrical, optical properties and microstructure and crystal structures of the resulting films were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, accompanying with the unbalanced grains grows. For the films prepared at different target−substrate distances, the uniform microstructure and 20 −3 2 morphology are observed. The highest carrier concentration of 5.9×10 cm and Hall mobility of 13.1 cm /(V·s) are obtained at substrate rotation speed of 0 and target−substrate distance of 7 cm. The results indicate that the structure and performances of the AZO films are strongly affected by substrate rotation speed. Key words: ZnO thin film; mid-frequency magnetron sputtering; substrate rotation speed; target−subst