电子封装用高导热金属基复合材料的研究.pdfVIP

VACUUM ELECTRONICS 何新波, 任树彬, 曲选辉, 郭志猛 ( 100083) Preparation of High Thermal Conductivity Metal Matrix Composites for Electronic Packaging HE Xinbo, REN Shubin, QU Xuanhui, GU O Zhimeng (S chool of M ater ials S cience and E ng ineer ing , Un iv er sity of S cience and Technology B e ij ing , B e ij ing 100083, Ch ina) Abstract:High thermal ondu tivity metal matr ix omposite materials are ideal for ele troni pa kaging materials, be ause of their ex ellent ther mal physi al pr operties and low density. H ow ever, due to their high brittleness and hardness, these materials have not been w idely used be ause they are hard to be ma hined into omplexshape. T his arti le summarizes some breakthroughs in our labor atory in nearnet shape for ming of thirdgeneration SiCp/ A l ele troni pa kaging materials and fourthgeneration diamond/ Cu ( or Al) ele troni pa kaging materials, as w ell as some dis ussion of some key pro ess parameter. And in the end, the future development prospe ts of high thermal ondu tivity metal matrix omposites have made. Key ords: Ele troni pa kaging, High thermal ondu tivity, Pr epar ation, Nearnet shape forming : , , , , SiCp/ Al / Cu( Al) , , : ; ; ; :TB333 :A :1002- 8935(2010)04- 0001- 04 , Kovar , WCu , , , , , , , , , , ( T C) ( CT E) [ 1- 2] ( M M C) , , , , - - 6 CTE 90 Kovar ( T C: 17 W/ ( m K) , CTE: 59 10 / K, 3 : 83 g/ m ) ( WCu) , , ( T C: 190 W/ ( m K) , CTE: 59 10- 6/ K, : 3 15~ 17 g/ m ) ,