Hg-%2c0.8-Cd-%2c0.2-Te长波光导器件的电阻特性.pdfVIP

Resistance Properties of LW-Photoconductor Detector for Hg0.8Cd0.2Te 1 LIU Dafu GONG Haimei XU Guosen State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 Abstract: The working temperature of long wavelength photoconductive HgCdTe detector has important effect on device’s performance. In general, the detector works at low temperature (about 100K). But the temperature of device itself is higher than ambient temperature due to electric power. In this article the relationship of detector ’s resistance with temperature as well as curves of resistance vs. current under different bias current (electric power) is obtained by experimental and theoretical analysis. One dimension stable model is used to calculate the temperature rise of device caused by electric power. Experimental results and theoretical analysis show that the temperature rise of device caused by electric power is more significant under higher bias current. When the bias current is 100mA, the temperature rise of device is about 200 Keywords: HgCdTePhotoconductor detectorThermal conductivity