Dynamic ferromagnetic proximity effect in photoexcited semiconductors.pdfVIP

Dynamic ferromagnetic proximity effect in photoexcited semiconductors 3 0 Gerrit E. W. Bauer,1 Arne Brataas,2 Yaroslav Tserkovnyak,3 0 2 Bertrand I. Halperin,3 Maciej Zwierzycki,4 and Paul J. Kelly4 t c 1 O Department of NanoScience, Delft University 2 of Technology, 2628 CJ Delft, The Netherlands ] 2Department of Physics, Norwegian University of l l a Science and Technology, N-7491 Trondheim, Norway h - s 3Lyman Laboratory of Physics, Harvard University, e m Cambridge, Massachusetts 02138, USA . t 4Faculty of Applied Physics and MESA Research Institute, a m- University of Twente, 7500 AE Enschede, The Netherlands d n (Dated: February 2, 2008) o c Abstract [ 1 The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet v 1 is treated theoretically and compared with time-dependent Faraday rotation experiments. The 3 0 0 long time response of the system is found to be governed by the first tens of picoseconds in 1 3 which the excited plasma interacts strongly with the intrinsic interface between semiconductor and 0 / ferromagnet in spite of the existence of a Schottky barrier in equilibrium. t a m - PACS numbers: 72.25.Mk,78.47.+p,75.70.-i,76.70.Fz d n o c : v i X r a 1 Magnetoelectronics, i.e. the science and technology of using ferromagnets in electronic circuits, is divided into two subfields