ECRMOPECVD生长GaN薄膜中的发射光谱分析.pdfVIP

Characterization of Optical emission spectroscopy of * ECR plasma for depositing GaN film Silie Fu, Junfang Chen, Wei Li, Maoping Zhang，Shejun Hu School of Physics and Communication Engineering, South China Normal University, Guangzhou 510006, China Abstract: The optical emission spectroscopes of the hybrid nitrogen and trimethylgallium ECR plasma were investigated in this paper. The results show that TMG is strongly dissociated in ECR plasma at room temperature condition. It is desirable to set a higher N : TMG ratio (N : TMG 10:1) to keep the Ga source and N source in balance to 2 2 grow high quality GaN film. Keywords: ECR-MOPECVD; OES; GaN 1. Introduction The wide direct band-gap compound semiconductor gallium nitride (GaN) has been widely applied in optoelectronic devices, due to its superior light-emitting and low power–consuming as well as long life stability [1~3]. Furthermore, its outstanding thermal and chemical stability enable it to operate at high temperatures and in hostile environments, such as petroleum probing and aerospace. As one of the growth techniques, Electron Cyclotron Resonance (ECR) plasma enhanced metalorganic chemical vapor deposition (ECR-MOPECVD) was recently developed to grow GaN at low substrate temperature. ECR plasma is generated as a consequence of the microwave energy absorption by the electrons through cyclotron resonance. It has been employed to the fabrication of high quality and compact structure f