Ohmic Contacts to n-type GaSb and n-type GaInAsSb.pdf

LM-03K059 June 16,2003 Ohmic Contacts to n-type GaSb and n-type GalnAsSb R.K. Huang, C.A. Wang, C.T. Harris, M.K. Connors D.A. Shiau NOTICE This report was prepared as an account of work sponsored by the United States Government. Neither the United States, nor the United States Department of Energy, nor any of their employees, nor any of their contractors, subcontractors, or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness or usefulness of any information, apparatus, product or process disclosed, or represents that its use would not infringe privately owned rights. Ohmic Contacts to n-type GaSb and n-type GaInAsSb Robin K. Huang, Christine A. Wang, Christopher T. Harris, Michael K. Connors, and Daniel A. Shiau Lincoln Laboratory, Massachusetts Institute ofTechnology 244 Wood St, Lexington, MA 02420-9 108 Abstract An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on both n-GaSb and semi-insulating GaAs substrates. These samples were fabricated into mesa-etched TLM structures, and the specific contact - resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific contact resistivities of about 2x 10-6 Q-cm2 and