《FERMI LEVEL ANALYSIS OF GROUP III NITRIDE》.pdf

Journal of ELECTRICAL ENGINEERING, VOL. 57, NO. 6, 2006, 354–359 FERMI LEVEL ANALYSIS OF GROUP III NITRIDE SEMICONDUCTOR DEVICE STRUCTURES BY AUGER PEAK POSITION MEASUREMENTS ∗ ∗ ∗ Gernot Ecke — Merten Niebelsch¨utz — Rastislav Kosiba — Uwe ∗∗ ∗ ∗∗∗ ∗∗∗ Rossow — Volker Cimalla — Jozef Liday — Peter Vogrinˇciˇc ∗ ∗ ∗ — J¨org Pezoldt — Vadim Lebedev — Oliver Ambacher The peak position of characteristic Auger transitions depends on the position of the Fermi level of the sample electrons. Thus, Auger electron spectroscopy can be applied for detection of semiconductor conduction type with a high lateral resolution typical for Auger electron spectroscopy mapping. Moreover, the peak position can be evaluated, even if the semiconductor surface is cleaned by sputtering. In this work, the Auger peak position measurements have been applied to GaN p-n-junctions as in cross section geometry as well as in Auger depth profiles. The method has also successfully been applied to n- and p- type doped AlGaN, and to Mg doped InN samples. It was observed that the differences in Auger peak positions from n- to p-type GaN and AlGaN differ from the theoretical prediction due to the impact of surface charges and additional band bending effects induced by the sputtering process. K e