《High-efficiency amorphous silicon devices on LPCVD-ZnO TCO》.pdf

th Preprint of the 24 European Photovoltaic Solar Energy Conference Exhibition, Hamburg, 21-25 September 2009 3BO.9.3 HIGH-EFFICIENCY AMORPHOUS SILICON DEVICES ON LPCVD-ZNO TCO PREPARED IN INDUSTRIAL KAITM-M RD REACTOR S. Benagli, D. Borrello, E. Vallat-Sauvain, J. Meier, U. Kroll, J. Hoetzel, J. Bailat, J. Steinhauser, M. Marmelo, G. Monteduro and L. Castens Oerlikon Solar-Lab S.A. Neuchâtel, Puits-Godet 12a, CH-2000 Neuchâtel, Switzerland, ABSTRACT: This paper presents a study on the optimal i-layer thickness for high efficiency amorphous silicon p-i-n solar cells deposited on doped LPCVD-ZnO. The optimization has led to excellent stabilized efficiencies at remarkably low amorphous i-layer thicknesses. A light-soaked single-junction a-Si:H cell with record efficiency of 2 10.09 % on 1 cm was independently confirmed by NREL. In a table, results of measurements done on the same devices at Oerlikon Solar-Lab Neuchâtel and NREL laboratories reveal very low deviations between both characterizations. The processes developed for a-Si:H cells were applied to the preparation of mini-modules (10 x 10 cm2). Measurements on these light-soaked mini-modules at ESTI laboratories of JRC have confirmed a module aperture efficiency of 9.20 ± 0.19 %. Keywords: a-Si, Light trapping, Deposition, PECVD, Solar Cell Efficiencies, LPCVD-ZnO, Manufacturing and Processing, Light-soaking 1 INTRODUCTION 2 EXPERIMENTAL On the