Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology》.pdf

Nuclear Instruments and Methods in Physics Research A 636 (2011) S62–S67 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research A journal homepage: www.elsevier.co m/locate/nima Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 mm FD-SOI technology M. Kochiyama a,n, T. Sega a, K. Hara a, Y. Arai b, T. Miyoshi b, Y. Ikegami b, S. Terada b, Y. Unno b, K. Fukuda c, M. Okihara d a School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan b KEK, High Energy Accelerator Organization, INPS, 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan c OKI Semiconductor Co. Ltd., Hachioji, Tokyo 193-8550, Japan d OKI Semiconductor Miyagi Co. Ltd., Ohira, Miyagi 981-3693, Japan a r t i c l e i n f o a b s t r a c t Available online 1 May 2010 Bonded silicon-on-insulator (SOI) wafers have the capability of realizing monolithic pixel devices, Keywords: where the silicon resistivity is optimized separately for the electronics and detector parts. Using SOI monolithic device UNIBOND wafers, we are developing monolithic pixel devices fabricated with OKI Semiconductor Radiation damage 0.20 mm FD-SOI technology. A set of PMOS and NMOS transistors were irradiated with protons in order TCAD to investigate the total ionization dose effect in transistor operation. We evaluated also the devices with Threshold shift